是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.29 |
其他特性: | LEADFORM OPTIONS ARE AVAILABLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (Abs) (ID): | 12 A | 最大漏极电流 (ID): | 12 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 280 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 200 ns |
最大开启时间(吨): | 115 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ7116 | MOTOROLA |
获取价格 |
12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
BUZ71A | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 50V - 0.1W - 13A TO-220 STripFET] POWER MOSFET | |
BUZ71A | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
BUZ71A | INTERSIL |
获取价格 |
13A, 50V, 0.120 Ohm, N-Channel Power MOSFET | |
BUZ71A | MOTOROLA |
获取价格 |
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
BUZ71A | NJSEMI |
获取价格 |
Trans MOSFET N-CH 50V 13A 3-Pin(3+Tab) TO-220AB | |
BUZ71A16 | MOTOROLA |
获取价格 |
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
BUZ71A16A | MOTOROLA |
获取价格 |
12 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
BUZ71AA | MOTOROLA |
获取价格 |
12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
BUZ71AA16A | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta |