Datasheet > BUZ71AFI

BUZ71AFI

更新时间： 2024-11-28 23:38:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	81K
描述
TRANSISTOR TO 220 MOSFET ISOLIERT

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中文翻译

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数据手册

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BUZ71AFI 数据手册

BUZ71

N - CHANNEL 50V - 0.085Ω - 17A TO-220

STripFET POWER MOSFET

TYPE

BUZ71

V_DSS

R_DS(on)

I_D

50 V

< 0.1 Ω

17 A

■

TYPICAL R_DS(on)= 0.085 Ω

AVALANCHERUGGED TECHNOLOGY

100% AVALANCHE TESTED

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATIONS

TO-220

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 C

Drain Current (pulsed)

I_DM

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

DIN HUMIDITY CATEGORY (DIN 40040)

IEC CLIMATIC CATEGORY (DIN IEC 68-1)

55/150/56

First digit of the datecode being Z or K identifies silicon characterized in this datasheet.

1/8

July 1999

12 3 4 5 6 7 8

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与BUZ71AFI相关器件

型号	品牌	获取价格	描述	数据表
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BUZ71AL-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
BUZ71AL-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
BUZ71AN	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
BUZ71AS	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
BUZ71AT	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta
BUZ71AU	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Meta