BUZ71L

更新时间： 2024-11-28 22:39:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	131K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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中文翻译

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技术参数
数据手册

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BUZ71L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
配置：	Single	最大漏极电流 (Abs) (ID)：	14 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	40 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

BUZ71L 数据手册

BUZ 71 L

Not for new design

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

DS(on)

Ω

BUZ 71 L

50 V

14 A

0.1

TO-220 AB

C67078-S1326-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 28 °C

Pulsed drain current

Dpuls

T = 25 °C

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

Ω

I = 14 A, V = 25 V, R = 25

L = 30.6 µH, T = 25 °C

Gate source voltage

± 14

Gate-source peak voltage,aperiodic

Power dissipation

tot

T = 25 °C

Operating temperature

-55 ... + 150 °C

-55 ... + 150

Storage temperature

stg

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

≤ 3.1

K/W

thJC

≤

thJA

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

中文翻译

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BUZ71N	MOTOROLA	获取价格	Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal
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