Datasheet > BUZ60B

BUZ60B

更新时间： 2024-11-28 22:08:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
5页	45K
描述
4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET

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BUZ60B 数据手册

BUZ60B

Semiconductor

Data Sheet

October 1998

File Number 2261.1

4.5A, 400V, 1.500 Ohm, N-Channel Power

MOSFET

Features

• 4.5A, 400V

• r = 1.500Ω

[ /Title

(BUZ60

/Sub-

ject

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

(4.5A,

400V,

1.500

Ohm,

N-Chan-

nel

Power

MOS-

FET)

Formerly developmental type TA17414.

• Majority Carrier Device

Ordering Information

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

BRAND

BUZ60B

TO-220AB

NOTE: When ordering, use the entire part number.

Symbol

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Chan-

nel

Packaging

JEDEC TO-220AB

Power

MOS-

FET,

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

TO-

220AB)

/Cre-

ator ()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/Use-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5

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