生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.27 |
雪崩能效等级(Eas): | 570 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 12.5 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 50 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ61-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Me | |
BUZ63 | INFINEON |
获取价格 |
main ratings | |
BUZ64 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11.5A I(D) | TO-204AA | |
BUZ67 | INFINEON |
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main ratings | |
BUZ70 | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
BUZ70AL | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-220AB | |
BUZ70L | INFINEON |
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SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) | |
BUZ70L-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ70L-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta | |
BUZ70L-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Meta |