BUT12

更新时间： 2024-11-13 22:27:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关高压
页数	文件大小	规格书
3页	31K
描述
High Voltage Power Switching Applications

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替代型号

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BUT12 数据手册

BUT12/12A

High Voltage Power Switching Applications

TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current (DC)

CBO

: BUT12

: BUT12A

850

1000

CEO

: BUT12

: BUT12A

400

450

*Collector Current (Pulse)

Base Current

Collector Dissipation (T =25°C)

100

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 175

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Turn On Time

Test Condition

Min.

400

Typ.

Max. Units

(sus)

= 100mA, L = 25mH

CEO

CES

= V

, V = 0

1.5

CES

= 9V, I = 0

EBO

(sat)

= 6A, I = 1.2A

(sat)

= 6A, I = 1.2A

= 250V, I = 6A

µs

= - I = 1.2A

Storage Time

STG

R = 41.6Ω

Fall Time

0.8

* Pulsed Test: PW = 300µs, duty cycle = 1.5%

Rev. A1, August 2001

12 3

中文翻译

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BUT12 替代型号

型号	品牌	替代类型	描述	数据表
BUT12TU	FAIRCHILD	功能相似	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与BUT12相关器件

型号	品牌	获取价格	描述	数据表
BUT12A	NXP	获取价格	Silicon diffused power transistors
BUT12A	FAIRCHILD	获取价格	High Voltage Power Switching Applications
BUT12A	SAVANTIC	获取价格	Silicon NPN Power Transistors
BUT12A	ISC	获取价格	isc Silicon NPN Power Transistor
BUT12A	Wing Shing	获取价格	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT12A/B	ETC	获取价格	TRANSISTOR HOCHSPANNUNG BIPOLAR
BUT12AF	Wing Shing	获取价格	SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT12AF	NXP	获取价格	Silicon diffused power transistors
BUT12AF	SAVANTIC	获取价格	Silicon NPN Power Transistors
BUT12AF	ISC	获取价格	Silicon NPN Power Transistors