BUT131

更新时间： 2024-11-14 06:44:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	113K
描述
isc Silicon NPN Power Transistors

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中文翻译

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数据手册

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BUT131 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BUT131/A

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 450V(Min)- BUT131

500V(Min)- BUT131A

·High Switching Speed

APPLICATIONS

·Designed for use in converters, inverters, switching

regulators, motor control systems etc.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

850

1000

450

500

UNIT

BUT131

BUT131A

BUT131

BUT131A

Collector-Emitter Voltage

V_CES

_BE= 0

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_BM

P_C

T_J

Collector Power Dissipation

℃

@ T_C=25℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.56

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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