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BUT12TU PDF预览

BUT12TU

更新时间: 2024-11-14 20:07:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
3页 27K
描述
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

BUT12TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.74最大集电极电流 (IC):8 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUT12TU 数据手册

 浏览型号BUT12TU的Datasheet PDF文件第2页浏览型号BUT12TU的Datasheet PDF文件第3页 
BUT12/12A  
High Voltage Power Switching Applications  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current (DC)  
CBO  
: BUT12  
: BUT12A  
850  
1000  
V
V
CEO  
: BUT12  
: BUT12A  
400  
450  
V
V
I
I
I
8
20  
A
A
C
*Collector Current (Pulse)  
Base Current  
CP  
B
4
A
P
Collector Dissipation (T =25°C)  
100  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 175  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
* Collector-Emitter Sustaining Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn On Time  
Test Condition  
Min.  
400  
Typ.  
Max. Units  
V
(sus)  
I
= 100mA, L = 25mH  
C
V
CEO  
CES  
I
I
V
V
= V  
, V = 0  
1
10  
1.5  
1.5  
1
mA  
mA  
V
CE  
BE  
CES  
BE  
= 9V, I = 0  
EBO  
C
V
(sat)  
I
I
= 6A, I = 1.2A  
B
CE  
C
C
V
(sat)  
= 6A, I = 1.2A  
V
BE  
B
t
t
V
I
= 250V, I = 6A  
µs  
µs  
µs  
ON  
CC  
C
= - I = 1.2A  
Storage Time  
B1  
B2  
4
STG  
F
R = 41.6Ω  
L
t
Fall Time  
0.8  
* Pulsed Test: PW = 300µs, duty cycle = 1.5%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, August 2001  

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