Datasheet > BUK7J2R4-80M

BUK7J2R4-80M

更新时间： 2024-03-03 10:10:20

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	217K
描述
N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56EDevelopment

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BUK7J2R4-80M 数据手册

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BUK7J2R4-80M

N-channel 80 V, 2.4 mOhm, Standard level MOSFET in LFPAK56E

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_(BR)DSS

V_GS(th)

I_DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

I_D= 250 µA; V_GS= 0 V; T_j= -40 °C

I_D= 250 µA; V_GS= 0 V; T_j= -55 °C

[tbd]

gate-source threshold I_D= 1 mA; V_DS=V_GS; T_j= 25 °C

voltage

I_D= 1 mA; V_DS=V_GS; T_j= 175 °C

I_D= 1 mA; V_DS=V_GS; T_j= -55 °C

3.4

0.07

[tbd]

4.6

drain leakage current

V_DS= 80 V; V_GS= 0 V; T_j= 25 °C

V_DS= 60 V; V_GS= 0 V; T_j= 125 °C

V_DS= 80 V; V_GS= 0 V; T_j= 125 °C

V_DS= 80 V; V_GS= 0 V; T_j= 175 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

V_GS= 10 V; I_D= 25 A; T_j= 105 °C

V_GS= 10 V; I_D= 25 A; T_j= 125 °C

V_GS= 10 V; I_D= 25 A; T_j= 175 °C

f = 1 MHz; T_j= 25 °C

µA

mΩ

[tbd]

100

500

100

2.4

3.8

4.3

5.5

[tbd]

I_GSS

gate leakage current

R_DSon

drain-source on-state

resistance

[tbd]

3.2

3.5

4.5

0.7

R_G

gate resistance

Dynamic characteristics

Q_G(tot)

total gate charge

I_D= 25 A; V_DS= 64 V; V_GS= 10 V

I_D= 0 A; V_DS= 0 V; V_GS= 10 V

I_D= 25 A; V_DS= 64 V; V_GS= 10 V

[tbd]

Q_GS

Q_GD

C_iss

C_oss

C_rss

gate-source charge

gate-drain charge

input capacitance

output capacitance

[tbd]

V_DS= 64 V; V_GS= 0 V; f = 1 MHz;

T_j= 25 °C

6700 [tbd]

1531 [tbd]

reverse transfer

capacitance

[tbd]

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 64 V; R_L= 2.4 Ω; V_GS= 10 V;

R_G(ext)= 5 Ω

turn-off delay time

fall time

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 25 A; V_GS= 0 V; T_j= 25 °C

0.81

reverse recovery time I_S= 25 A; dI_S/dt = -100 A/µs; V_GS= 0 V;

V_DS= 40 V; Fig. 4

Q_r

recovered charge

BUK7J2R4-80M

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Objective data sheet

9 October 2023

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