Datasheet > BUK6226-75C,118

BUK6226-75C,118

更新时间： 2024-11-29 14:50:11

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
14页	185K
描述
N-channel TrenchMOS FET DPAK 3-Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BUK6226-75C,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DPAK
针数：	3	Reach Compliance Code：	not_compliant
风险等级：	5.74	Is Samacsys：	N
Base Number Matches：	1

BUK6226-75C,118 数据手册

BUK6226-75C

N-channel TrenchMOS FET

Rev. 01 — 4 October 2010

Product data sheet

1. Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for standard and logic level

gate drive sources

1.3 Applications

12 V and 24 V Automotive systems

Start-Stop micro-hybrid applications

Transmission control

Electric and electro-hydraulic power

steering

Ultra high performance power

Motors, lamps and solenoid control

switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

I_D

V_GS= 10 V; T_mb= 25 °C;

see Figure 1

P_tot

total power dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source on-state

resistance

Avalanche ruggedness

V_GS= 10 V; I_D= 12 A;

T_j= 25 °C; see Figure 11

24.5 29

mΩ

E_DS(AL)S

non-repetitive

drain-source avalanche

energy

I_D= 33 A; V_sup≤ 75 V;

_GS= 50 Ω; V_GS= 10 V;

T_j(init)= 25 °C; unclamped

Dynamic characteristics

Q_GDgate-drain charge

I_D= 25 A; V_DS= 60 V;

V_GS= 10 V; see Figure 13;

see Figure 14

9.4

12 3 4 5 6 7...14

中文翻译

下载PDF

与BUK6226-75C,118相关器件

型号	品牌	获取价格	描述	数据表
BUK6228-55C	NXP	获取价格	31A, 55V, 0.044ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3
BUK6228-55C,118	NXP	获取价格	N-channel TrenchMOS intermediate level FET DPAK 3-Pin
BUK6240-75C	NXP	获取价格	TRANSISTOR 22 A, 75 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DP
BUK6240-75C,118	NXP	获取价格	N-channel TrenchMOS FET DPAK 3-Pin
BUK6246-75C	NXP	获取价格	22A, 75V, 0.064ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3/2
BUK6246-75C,118	NXP	获取价格	N-channel TrenchMOS intermediate level FET DPAK 3-Pin
BUK624R5-30C	NXP	获取价格	90A, 30V, 0.0075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3
BUK624R5-30C,118	NXP	获取价格	N-channel TrenchMOS intermediate level FET DPAK 3-Pin
BUK625R0-40C	NXP	获取价格	90A, 40V, 0.0083ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3
BUK625R0-40C,118	NXP	获取价格	N-channel TrenchMOS intermediate level FET DPAK 3-Pin