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BUK223-50Y PDF预览

BUK223-50Y

更新时间: 2024-11-10 21:55:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体开关晶体管
页数 文件大小 规格书
8页 54K
描述
PowerMOS transistor TOPFET high side switch

BUK223-50Y 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:PLASTIC, SOT-263B-01, TO-220, 5 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.82内置保护:TRANSIENT
驱动器位数:1接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PZFM-T5功能数量:1
端子数量:5最高工作温度:150 °C
最低工作温度:-40 °C输出电流流向:SOURCE
最大输出电流:25 A标称输出峰值电流:55 A
封装主体材料:PLASTIC/EPOXY封装代码:ZIP
封装等效代码:ZIP5,.15,.17,67TB封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
电源:5.5/35 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:35 V
最小供电电压:5.5 V标称供电电压:13 V
表面贴装:NO技术:MOS
温度等级:AUTOMOTIVE端子形式:THROUGH-HOLE
端子节距:1.7 mm端子位置:ZIG-ZAG
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:140 µs
接通时间:200 µsBase Number Matches:1

BUK223-50Y 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistor  
TOPFET high side switch  
BUK223-50Y  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic single channel high side  
protected power switch in  
TOPFET2 technology assembled in  
a 5 pin plastic package.  
SYMBOL  
PARAMETER  
MIN.  
UNIT  
IL  
Nominal load current (ISO)  
12  
A
APPLICATIONS  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
General controller for driving  
lamps, motors, solenoids, heaters.  
VBG  
IL  
Continuous off-state supply voltage  
Continuous load current  
50  
25  
150  
30  
V
A
˚C  
m  
Tj  
Continuous junction temperature  
RON  
On-state resistance  
Tj = 25˚C  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
Vertical power TrenchMOS  
Low on-state resistance  
CMOS logic compatible  
Very low quiescent current  
Overtemperature protection  
Load current limiting  
BATT  
STATUS  
POWER  
Latched overload and  
short circuit protection  
Overvoltage and undervoltage  
shutdown with hysteresis  
On-state open circuit load  
detection  
Diagnostic status indication  
Voltage clamping for turn off  
of inductive loads  
MOSFET  
INPUT  
CONTROL &  
PROTECTION  
CIRCUITS  
ESD protection on all pins  
Reverse battery, overvoltage  
and transient protection  
LOAD  
GROUND  
RG  
Fig.1. Elements of the TOPFET HSS with internal ground resistor.  
PINNING - SOT263B-01  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
mb  
mb  
D
S
Input  
Flag  
TOPFET  
2
P
F
I
P
3
Drain  
4
Protection supply  
Source  
1 2 3 4 5  
Front view  
MBL267  
5
Fig. 2.  
Fig. 3.  
tab Drain  
November 2002  
1
Rev 2.000  

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