生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 10.9 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
元件数量: | 1 | 最高工作温度: | 150 °C |
最大功率耗散 (Abs): | 310 W | 子类别: | FET General Purpose Power |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK416-1000BE | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 10.9A I(D) |
![]() |
BUK416-100AE | PHILIPS |
获取价格 |
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, |
![]() |
BUK416-100BE | NXP |
获取价格 |
TRANSISTOR 100 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Powe |
![]() |
BUK416-200AE | PHILIPS |
获取价格 |
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, |
![]() |
BUK416-200AE | NXP |
获取价格 |
TRANSISTOR 63 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
![]() |
BUK416-200BE | PHILIPS |
获取价格 |
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, |
![]() |
BUK416-200BE | NXP |
获取价格 |
TRANSISTOR 63 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
![]() |
BUK417-500AE | NXP |
获取价格 |
TRANSISTOR 32 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
![]() |
BUK417-500AE | PHILIPS |
获取价格 |
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, |
![]() |
BUK417-500BE | NXP |
获取价格 |
TRANSISTOR 28 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
![]() |