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BUF405AFP PDF预览

BUF405AFP

更新时间: 2024-11-12 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 54K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BUF405AFP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220FP
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.77
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:ISOLATED最大集电极电流 (IC):7.5 A
集电极-发射极最大电压:450 V配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):39 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUF405AFP 数据手册

 浏览型号BUF405AFP的Datasheet PDF文件第2页浏览型号BUF405AFP的Datasheet PDF文件第3页浏览型号BUF405AFP的Datasheet PDF文件第4页浏览型号BUF405AFP的Datasheet PDF文件第5页浏览型号BUF405AFP的Datasheet PDF文件第6页 
BUF405A  
BUF405AFP  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
HIGH SWITCHING SPEED NPN POWER  
TRANSISTORS  
EASY TO DRIVE  
HIGH VOLTAGE FOR OFF-LINE  
APPLICATIONS  
100 KHz SWITCHING SPEED  
LOW COST DRIVE CIRCUITS  
LOW DYNAMIC SATURATION  
3
3
2
2
APPLICATIONS:  
1
1
SWITCH MODE POWER SUPPLIES  
MOTOR DRIVERS  
TO-220  
TO-220FP  
DESCRIPTION  
These Easy-to-Drive FASTSWITCH NPN power  
transistors are specially designed for high  
reliability industrial and professional power driving  
applications such us motor drives and off-line  
switching power supplies. ETD transistors will  
operate using easy drive circuits at up to 100KHz;  
this helps to simplify designs and improve  
reliability. The superior switching performance  
and low crossover losses reduce dissipation and  
consequently lowers the equipment operating  
temperature.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BUF405A  
BUF405AFP  
VCEV  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (VBE = -1.5 V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
1000  
450  
7
V
V
V
7.5  
15  
A
ICM  
IB  
Collector Peak Current (tp < 5 ms)  
Base Current  
A
3
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp < 5 ms)  
4.5  
A
o
Total Dissipation at Tc = 25 C  
80  
39  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max Operation Junction Temperature  
1/6  
January 1999  

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