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BUF410A PDF预览

BUF410A

更新时间: 2024-11-13 06:44:39
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 109K
描述
isc Silicon NPN Power Transistor

BUF410A 数据手册

 浏览型号BUF410A的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BUF410A  
DESCRIPTION  
·High Voltage  
·High Speed Switching  
APPLICATIONS  
·Designed for use in high-frequency power supplies and  
motor control applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25)  
SYMBOL  
VCEV  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Emitter Voltage VBE= -1.5V  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
1000  
450  
7
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
15  
A
ICM  
30  
A
IB  
Base Current-Continuous  
Base Current-peak  
3
A
IBM  
4.5  
A
Collector Power Dissipation  
@TC=25  
PC  
125  
150  
-65~150  
W
Tj  
Junction Temperature  
Tstg  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX UNIT  
1.0  
/W  
Thermal Resistance,Junction to Case  
Rth j-c  
isc Websitewww.iscsemi.cn  

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