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BUF410A PDF预览

BUF410A

更新时间: 2024-11-12 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 72K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUF410A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.74最大集电极电流 (IC):15 A
集电极-发射极最大电压:450 V配置:SINGLE
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:125 W
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):0.1 MHz最大关闭时间(toff):3320 ns
VCEsat-Max:2.8 VBase Number Matches:1

BUF410A 数据手册

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BUF410A  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
HIGH VOLTAGE CAPABILITY  
VERY HIGH SWITCHING SPEED  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
LOW BASE-DRIVE REQUIREMENTS  
APPLICATIONS:  
3
SWITCH MODE POWER SUPPLIES  
MOTOR CONTROL  
2
1
DESCRIPTION  
TO-218  
The BUF410A is manufactured using High  
Voltage Multi Epitaxial Planar technology for high  
switching speeds and high voltage capacity. They  
use a Cellular Emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining a wide RBSOA.  
The BUF series is designed for use in  
high-frequency power supplies and motor control  
applications.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5 V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1000  
V
V
450  
7
V
15  
30  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
A
IB  
3
A
IBM  
Base Peak Current (tp < 5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
4.5  
A
Ptot  
Tstg  
Tj  
125  
W
oC  
oC  
-65 to 150  
150  
Max Operation Junction Temperature  
1/6  
March 1996  

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