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BUF420I PDF预览

BUF420I

更新时间: 2024-11-13 13:05:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
7页 83K
描述
30A, 450V, NPN, Si, POWER TRANSISTOR

BUF420I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.87
外壳连接:ISOLATED最大集电极电流 (IC):30 A
集电极-发射极最大电压:450 V配置:SINGLE
JESD-30 代码:R-CSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:115 W最大功率耗散 (Abs):115 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):0.1 MHz
最大关闭时间(toff):3620 nsVCEsat-Max:2.8 V
Base Number Matches:1

BUF420I 数据手册

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BUF420  
BUF420M  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPES  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
VERY HIGH SWITCHING SPEED  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
LOW BASE-DRIVE REQUIREMENTS  
1
3
APPLICATIONS:  
2
2
SWITCH MODE POWER SUPPLIES  
MOTOR CONTROL  
1
TO-218  
TO-3  
(version ”R”)  
DESCRIPTION  
The BUF420 and BUF420M are manufactured  
using High Voltage Multi Epitaxial Planar  
technology for high switching speeds and high  
voltage capacity. They use a Cellular Emitter  
structure with planar edge termination to enhance  
switching speeds while maintaining a wide  
RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
The BUF series is designed for use in  
high-frequency power supplies and motor control  
applications.  
For TO-3 :  
C = Tab  
E = Pin2.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5 V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
850  
450  
7
Unit  
V
V
V
A
A
A
A
30  
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
60  
IB  
6
IBM  
Base Peak Current (tp < 5 ms)  
9
TO-218  
TO-3  
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
200  
200  
W
oC  
oC  
-65 to 150  
150  
Max Operation Junction Temperature  
1/7  
July 1997  

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