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BUF508A PDF预览

BUF508A

更新时间: 2024-09-25 03:23:11
品牌 Logo 应用领域
CDIL 晶体晶体管高压
页数 文件大小 规格书
3页 116K
描述
NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR

BUF508A 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):8 A配置:Single
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):60 W子类别:Other Transistors
表面贴装:NOBase Number Matches:1

BUF508A 数据手册

 浏览型号BUF508A的Datasheet PDF文件第2页浏览型号BUF508A的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR  
BUF508A  
TO-220FP Fully Isolated  
Plastic Package  
Applications  
High voltage, high - speed switching transistor in TO - 220FP package envelope intended  
for use in horizontal deflection of colour television circuits.  
ABSOLUTE MAXIMUM RATINGS.  
DESCRIPTION  
SYMBOL  
VCESM  
VCEO  
VALUE  
1500  
700  
UNIT  
Collector Emitter Voltage Peak Value; VBE=O  
Collector Emitter Voltage  
Collector Current (DC)  
V
V
A
IC  
8.0  
ICM  
Collector Current (Peak)  
15  
A
Base Current (DC)  
IB  
IBM  
4.0  
6.0  
A
A
Base Current (Peak)  
- IB(AV)  
Reverse Base Current  
100  
mA  
(DC or average over any 20ms period)  
IBM  
Reverse Base Current *(Peak Value)  
Power Dissipation upto Tmb=25ºC  
5.0  
60  
A
W
Ptot  
Tj, Tstg  
Operating & Storage Junction  
-65 to +150  
ºC  
Temperature Range  
*Turn off current  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
DESCRIPTION  
Collector Cut off Current **  
SYMBOL TEST CONDITION  
MIN  
-
MAX  
1.0  
UNIT  
mA  
ICES  
VCE=VCESM max, VBE=0  
Tj=125ºC  
VCE=VCESM max, VBE=0  
-
-
2.0  
10  
-
1.0  
1.3  
mA  
mA  
V
V
V
IEBO  
VEB=6V,IC=0  
VCEO (sus) IC=100mA, IB=0, L=25mH  
VCE (Sat) IC=4.5A, IB=2A  
Emitter Cut off Current  
Collector Emitter (sus) Voltage  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
700  
-
-
VBE(Sat) IC=4.5A, IB=2A  
DYNAMIC CHARACTERISTISC  
Transition Frequency  
Collector Capacitance  
IC=0.1A, VCE=5V, f=5MHz  
IE=ie=0, VCB=10V, f=1MHz  
TYP 7.0  
TYP 125  
ft  
Cc  
MHz  
pF  
**Measured with half - sinewave voltage (curve tracer)  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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