BU2527DX

更新时间： 2024-11-22 22:48:35

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	87K
描述
Silicon Diffused Power Transistor

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BU2527DX 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2527DX

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic

full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved

RBSOA performance.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Storage time

P_tot

T_hs≤ 25 ˚C

V_CEsat

I_Csat

t_s

I_C= 8.0 A; I_B= 1.6 A

f = 64 kHz

5.0

6.0

1.7

I_Csat= 6.0 A; f = 64 kHz

2.0

µs

PINNING - SOT399

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

Rbe

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

Base current peak value

Reverse base current

average over any 20 ms period

200

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_hs≤ 25 ˚C

˚C

-65

150

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

without heatsink compound

with heatsink compound

in free air

3.7

2.8

K/W

1 Turn-off current.

September 1997

Rev 1.200

12 3 4 5 6 7

中文翻译

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