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BU2532AL PDF预览

BU2532AL

更新时间: 2024-11-25 22:48:35
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 64K
描述
Silicon Diffused Power Transistor

BU2532AL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.86Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):6JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:125 W
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):1900 nsVCEsat-Max:5 V
Base Number Matches:1

BU2532AL 数据手册

 浏览型号BU2532AL的Datasheet PDF文件第2页浏览型号BU2532AL的Datasheet PDF文件第3页浏览型号BU2532AL的Datasheet PDF文件第4页浏览型号BU2532AL的Datasheet PDF文件第5页浏览型号BU2532AL的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BU2532AL  
GENERAL DESCRIPTION  
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in  
horizontal deflection circuits of high resolution monitors up to 82 kHz.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0  
-
-
1500  
800  
16  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Storage time  
-
40  
A
Ptot  
T
mb 25 ˚C  
-
125  
5.0  
-
W
V
VCEsat  
ICsat  
ts  
IC = 7.0 A; IB = 1.17 A  
-
7
1.4  
A
ICsat = 7.0 A; IB(end) = 1 A  
1.8  
µs  
PINNING - SOT430  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
base  
2
collector  
emitter  
b
3
heat collector  
sink  
e
1
2
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
800  
16  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Base current (DC)  
-
40  
A
IB  
IBM  
-IB(AV)  
-IBM  
Ptot  
Tstg  
Tj  
-
10  
15  
200  
10  
125  
150  
150  
A
Base current peak value  
Reverse base current  
-
A
average over any 20 ms period  
-
mA  
A
Reverse base current peak value 1  
Total power dissipation  
Storage temperature  
-
-
Tmb 25 ˚C  
W
˚C  
˚C  
-55  
-
Junction temperature  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Junction to mounting base  
Junction to ambient  
-
-
1.0  
-
K/W  
K/W  
in free air  
35  
1 Turn-off current.  
September 1997  
1
Rev 1.100  

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