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BU2530AW PDF预览

BU2530AW

更新时间: 2024-11-25 22:48:35
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
6页 73K
描述
Silicon Diffused Power Transistor

BU2530AW 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-247包装说明:PLASTIC, SOT-429, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.84外壳连接:COLLECTOR
最大集电极电流 (IC):16 A集电极-发射极最大电压:800 V
配置:SINGLE最小直流电流增益 (hFE):5.5
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:125 W
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):4750 nsVCEsat-Max:5 V
Base Number Matches:1

BU2530AW 数据手册

 浏览型号BU2530AW的Datasheet PDF文件第2页浏览型号BU2530AW的Datasheet PDF文件第3页浏览型号BU2530AW的Datasheet PDF文件第4页浏览型号BU2530AW的Datasheet PDF文件第5页浏览型号BU2530AW的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Silicon Diffused Power Transistor  
BU2530AW  
GENERAL DESCRIPTION  
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in  
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.  
QUICK REFERENCE DATA  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0  
-
-
1500  
800  
16  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
A
ICM  
Collector current peak value  
Total power dissipation  
Collector-emitter saturation voltage  
Collector saturation current  
Storage time  
-
40  
A
Ptot  
T
mb 25 ˚C  
-
125  
5.0  
-
W
V
VCEsat  
ICsat  
ts  
IC = 9.0 A; IB = 1.64 A  
-
9
3.5  
A
ICsat = 9.0 A; IB(end) = 1.3 A  
4.5  
µs  
PINNING - SOT429  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
base  
2
collector  
emitter  
b
3
tab collector  
2
1
3
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCESM  
VCEO  
IC  
Collector-emitter voltage peak value  
VBE = 0 V  
-
1500  
800  
16  
V
V
Collector-emitter voltage (open base)  
Collector current (DC)  
-
-
A
ICM  
Collector current peak value  
Base current (DC)  
-
40  
A
IB  
IBM  
-IB(AV)  
-IBM  
Ptot  
Tstg  
Tj  
-
10  
15  
200  
10  
125  
150  
150  
A
Base current peak value  
Reverse base current  
-
A
average over any 20 ms period  
-
mA  
A
Reverse base current peak value 1  
Total power dissipation  
Storage temperature  
-
-
Tmb 25 ˚C  
W
˚C  
˚C  
-55  
-
Junction temperature  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Junction to mounting base  
Junction to ambient  
-
-
1.0  
-
K/W  
K/W  
in free air  
45  
1 Turn-off current.  
September 1997  
1
Rev 1.000  

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