BU2532AW/B

更新时间： 2024-11-22 23:36:07

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
6页	66K
描述
TRANSISTOR POWER TO-247

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中文翻译

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数据手册

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BU2532AW/B 数据手册

Philips Semiconductors

Initial specification

Silicon Diffused Power Transistor

BU2532AW

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

horizontal deflection circuits of high resolution monitors.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Storage time

P_tot

T_mb≤ 25 ˚C

125

5.0

V_CEsat

I_Csat

t_s

I_C= 7.0 A; I_B= 1.17 A

f = 82 kHz

1.4

I_Csat= 7.0 A; f = 82 kHz

1.8

µs

PINNING - SOT429

PIN CONFIGURATION

SYMBOL

DESCRIPTION

base

collector

emitter

tab collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1500

800

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

200

125

150

Base current peak value

Reverse base current

average over any 20 ms period

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_mb≤ 25 ˚C

˚C

-55

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

1.0

K/W

in free air

1 Turn-off current.

September 1997

Rev 1.000

12 3 4 5 6

中文翻译

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