Datasheet > BU103BH

BU103BH

更新时间： 2024-11-16 01:19:15

品牌	Logo	应用领域
晶导 - JINGDAO		/
页数	文件大小	规格书
3页	113K
描述
Bipolar Junction Transistor

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BU103BH 数据手册

BU103BH

深圳市晶导电子有限公司

ShenZhen Jingdao Electronic Co.,Ltd.

www.jdsemi.cn

Bipolar Junction Transistor

◆

Si NPN

RoHS COMPLIANT

1．APPLICATION

Charger and Switch-mode power supplies

2．FEATURES

ꢀ

High voltage capability

Features of good high temperature

High switching speed

3．PACKAGE

TO-92

4．Electrical Characteristics

4.1Absolute Maximum Ratings

T_amb= 25℃ unless specified

1 Emitter(E) 2 Collector(C) 3 Base(B)

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

Collector-Emittor Voltage

Emittor- Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

800

430

1.6

0.8

Ta=25℃

Power Dissipation

P_tot

Tc=25℃

Junction Temperature

Storage Temperature

T_j

150

℃

T_stg

-55～150

4.2 Electrical Parameter

T_amb= 25℃ unless specified

VALUE

PARAMETER

SYMBOL

TEST CONDITION

I_C=1mA,I_E=0

UNIT

MIN

800

430

TYP MAX

Collector-Base Voltage

BV_CBO

BV_CEO

BV_EBO

I_CBO

Collector-Emittor Voltage

Emittor-Base Voltage

I_C=1mA ,I_B=0

I_E=1mA,I_C=0

Collector-Base Cutoff Current

Collector-Emittor Cutoff Current

Emittor-Base Cutoff Current

V_CB=800V, I_E=0

V_CE=430V, I_B=0

V_EB=9V, I_C=0

μA

I_CEO

I_EBO

V_CE=5V, I_C=1mA

V_CE=5V, I_C=200mA

I_C=1A, I_B=0.5A

DC Current Gain

h_FE

0.6

1.2

1.0

3.5

Collector-Emittor Saturation Voltage

Base-Emittor Saturation Voltage

Rising Time

V_{CE sat}

V_{BE sat}

t_r

t_f

t_s

Falling Time

I_C=250mA (UI9600)

μs

Storage Time

1.5

V_CE=20V,I_C=20mA,

f=1MHz

Typical Frequency

MHz

f_T

＊: Pulse test tp≤300μs,δ≤2%

Add：1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C

Tel：0755-29799516 Fax：0755-29799515

第1 页 2013 版

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