5秒后页面跳转
BU109 PDF预览

BU109

更新时间: 2024-11-14 22:27:59
品牌 Logo 应用领域
CDIL 晶体晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
3页 191K
描述
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR

BU109 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.45Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):7 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:60 W
最大功率耗散 (Abs):85 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzVCEsat-Max:1 V
Base Number Matches:1

BU109 数据手册

 浏览型号BU109的Datasheet PDF文件第2页浏览型号BU109的Datasheet PDF文件第3页 
IS/ISO 9002  
Lic# QSC/L-000019.3  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
BU109  
TO-3  
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR  
Metal Can Package  
HORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTs  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)  
SYMBOL  
VALUE  
DESCRIPTION  
UNITS  
VCEO  
VCBO  
VEBO  
VCEV  
IC  
150  
330  
Collector Emitter Voltage  
Collector Base Voltage  
V
V
6.0  
Emitter Base Voltage  
V
Collector Emitter Voltage (VBE= -1.5V)  
Collector Current  
330  
V
7.0  
A
ICM  
10.0  
15.0  
4.0  
Collector Peak Current (Repetitive)  
Collector Peak Current (t=10ms)  
Base Current  
A
ICM  
A
IB  
A
Ptot  
Tj  
60  
Total Power Dissipation@ Tc<25ºC  
Juntion Temperature  
W
ºC  
ºC  
150  
Tstg  
-65 To+150  
Storage Temperature  
THERMAL RESISTANCE  
Junction to Ambient  
Junction to Case  
Rth(j-a)  
Rth(j-c)  
70  
ºC/W  
ºC/W  
2.08  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
MAX  
UNITS  
ICES  
ICES  
VCE=330V, VBE=0  
VCE=200V, VBE=0  
VCE=200V, VBE=0  
TC=150ºC  
Collector Cut off Current  
5.0  
mA  
100  
mA  
ICES  
1.0  
mA  
IEBO  
VCE(Sat)  
VBE(Sat)  
fT  
VEB=6V, IC=0  
Emitter Cut off Current  
1.0  
1.0  
1.2  
mA  
V
*
IC=5A,IB=0.5A  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
Transition Frequency  
*
IC=5A,IB=0.5A  
V
IC=0.5A, VCE=10V  
IC=5A, IB end = 0.5A  
10  
MHz  
us  
toff  
Turn off Time  
0.75  
*Pulse Test: Pulse Duration=300ms, Duty Cycle =1.5%  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

与BU109相关器件

型号 品牌 获取价格 描述 数据表
BU-109-0 ETC

获取价格

Mini Insulated Alligator Clip.
BU-109-2 ETC

获取价格

Mini Insulated Alligator Clip.
BU10B-EVZ2H-2B1 JST

获取价格

Wire-to-wire Panek Mount connector
BU10B-EVZ2H-2B3 JST

获取价格

Wire-to-wire Panek Mount connector
BU10B-EVZ2K-2A1 JST

获取价格

Wire-to-wire Panek Mount connector
BU10B-EVZ2K-2A3 JST

获取价格

Wire-to-wire Panek Mount connector
BU10JA2DG-C ROHM

获取价格

BU10JA2DG-C是采用通用型封装SSOP5 (2.90mm × 2.80mm × 1
BU10JA2MNVX-C ROHM

获取价格

Ultra-Small Package FULL CMOS LDO Regulator
BU10JA2MNVX-TL ROHM

获取价格

Ultra-Small Package FULL CMOS LDO Regulator
BU10JA2VG-C ROHM

获取价格

BU10JA2VG-C是输出为200mA的高性能CMOS稳压器。封装组件采用SSOP5,有