BTS112ASMD

更新时间： 2024-10-15 13:05:59

品牌	Logo	应用领域
英飞凌 - INFINEON		传感器温度传感器
页数	文件大小	规格书
9页	323K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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BTS112ASMD 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.68
Base Number Matches：	1

BTS112ASMD 数据手册

TEMPFET

BTS 112A

Features

● N channel

● Enhancement mode

● Temperature sensor with thyristor characteristic

● The drain pin is electricalIy shorted to the tab

Type

V_DS

I_D

R_DS(on)

Package

TO-220AB

Ordering Code

BTS 112A

60 V

12 A

0.15 Ω

C67078-S5014-A3

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

V_DS

V_DGR

V_GS

I_D

Drain-gate voltage, R_GS= 20 kΩ

Gate-source voltage

± 20

Continuous drain current, T_C= 33 °C

ISO drain current

I_D-ISO

2.5

T_C= 85 °C, V_GS= 10 V, V_DS= 0.5 V

Pulsed drain current,

Short circuit current,

T_C= 25 °C

T_j= – 55 ... + 150 °C

I_{D puls}

I_SC

Short circuit dissipation, T_j= – 55 ... + 150 °C

Power dissipation

400

P_SCmax

P_tot

Operating and storage temperature range

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

T_j, T_stg

–

– 55 ... + 150

°C

–

55/150/56

Thermal resistance

Chip-case

Chip-ambient

K/W

R_{th JC}

R_{th JA}

≤ 3.1

≤ 75

Semiconductor Group

04.97

12 3 4 5 6 7...9

中文翻译

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