Datasheet > BTA410-800CT

BTA410-800CT

更新时间： 2024-11-15 17:01:43

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	468K
描述
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package inte

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BTA410-800CT 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.27
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	4 QUADRANT LOGIC LEVEL TRIAC	Base Number Matches：	1

BTA410-800CT 数据手册

BTA410-800CT

3Q Hi-Com Triac

Rev.02 - 09 October 2021

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a TO220 plastic package intended for

use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac

will commutate the full RMS current at the maximum rated junction temperature (T_j(max)= 150 °C)

without the aid of a snubber. It is used in applications where "high junction operating temperature

capability" is required.

2. Features and beneﬁts

•

3Q technology for improved noise immunity

•

High commutation capability with maximum false trigger immunity

High immunity to false turn-on by dV/dt

High junction operating temperature capability

High voltage capability

Less sensitive gate for high noise immunity

Planar passivated for voltage ruggedness and reliability

Triggering in three quadrants only

3. Applications

•

Applications subject to high temperature

Electronic thermostats (heating and cooling)

Motor controls e.g. washing machines and vacuum cleaners

Rectiﬁer-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Absolute maximum rating

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

800

RMS on-state current

full sine wave; T_mb≤ 131 °C; Fig. 1;

Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

100

state current

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

110

150

Max

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...13

中文翻译

下载PDF

与BTA410-800CT相关器件

型号	品牌	获取价格	描述	数据表
BTA410-800CT,127	NXP	获取价格	BTA410-800CT
BTA410-800ET	WEEN	获取价格	3Q Hi-Com Triac
BTA410X-600BT	WEEN	获取价格	3Q Hi-Com Triac
BTA410X-600CT	WEEN	获取价格	3Q Hi-Com Triac
BTA410X-600ET	WEEN	获取价格	3Q Hi-Com Triac
BTA410X-800BT	WEEN	获取价格	3Q Hi-Com Triac
BTA410X-800CT	WEEN	获取价格	3Q Hi-Com Triac
BTA410X-800ET	WEEN	获取价格	3Q Hi-Com Triac
BTA410Y-600BT	WEEN	获取价格	3Q Hi-Com Triac
BTA410Y-600CT	WEEN	获取价格	3Q Hi-Com Triac