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BTA41

更新时间： 2024-11-14 06:44:27

品牌	Logo	应用领域
SIRECT		可控硅
页数	文件大小	规格书
4页	163K
描述
Discrete Triacs(Non-Isolated/Isolated)

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BTA41 数据手册

BTB/BTA41

Discrete Triacs(Non-Isolated/Isolated)

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AD

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

1.5 2.49 0.087 0.102

ABSOLUTE MAXIMUM RATINGS

Parameter

Value

Unit

Symbol

RMS on-state current (full sine wave)

T(RMS)

TO-247AD

Tc = 80 °C

t = 16.7 ms

t = 20 ms

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C)

F = 60 Hz

F = 50 Hz

420

400

TSM

tp = 10 ms

A s

I t

I t Value for fusing

880

Critical rate of rise of on-state current

dI/dt

F = 120 Hz

tp = 10 ms

tp = 20 µs

Tj = 125°C

A/µs

, tr < 100 ns

= 2 x I

Non repetitive surge peak off-state

voltage

DRM RRM

Tj = 25°C

DSM RSM

+ 100

Peak gate current

Tj = 125°C

Average gate p ower diss ipation

Tj = 125°C

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

Value

Unit

I - II - III

(1)

MAX.

100

V = 12 V

R = 33

Ω

ALL

MAX.

MIN.

1.3

0.2

V = V

R = 3.3 k

Tj = 125°C

(2)

DRM

I = 500 mA

MAX.

I = 1.2 I

I- III-IV

160

dV/dt (2)

67 %

DRM

V/µs

gate open Tj = 125°C

Tj = 125°C

MIN.

500

(dI/dt)c (2) Without snubber

A/ms

12 3 4

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