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BTA410-800BT PDF预览

BTA410-800BT

更新时间: 2024-04-09 19:00:20
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 468K
描述
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package inte

BTA410-800BT 数据手册

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BTA410-800BT  
3Q Hi-Com Triac  
Rev.02 - 09 October 2021  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a TO220 plastic package intended for  
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac  
will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C)  
without the aid of a snubber. It is used in applications where "high junction operating temperature  
capability" is required.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
High junction operating temperature capability  
High voltage capability  
Less sensitive gate for high noise immunity  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
3. Applications  
Applications subject to high temperature  
Electronic thermostats (heating and cooling)  
Motor controls e.g. washing machines and vacuum cleaners  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
800  
10  
V
A
A
RMS on-state current  
full sine wave; Tmb ≤ 131 °C; Fig. 1;  
Fig. 2; Fig. 3  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
100  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
110  
150  
Max  
A
Tj  
junction temperature  
-
-
°C  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Unit  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
2
2
-
-
-
50  
50  
50  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  

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