Datasheet > BTA410-800BT

BTA410-800BT

更新时间： 2024-04-09 19:00:20

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	468K
描述
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package inte

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BTA410-800BT 数据手册

WeEn Semiconductors

BTA410-800BT

3Q Hi-Com Triac

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

I_L

latching current

V_D= 12 V; I_G= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 8

V_D= 12 V; I_G= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 8

I_H

holding current

V_D= 12 V; T_j= 25 °C; Fig. 9

I_T= 15 A; T_j= 25 °C; Fig. 10

1.6

V_T

V_GT

on-state voltage

gate trigger voltage

1.3

0.8

V_D= 12 V; I_T= 0.1 A; T_j= 25 °C;

Fig. 11

V_D= 400 V; I_T= 0.1 A; T_j= 150 °C

V_D= 800 V; T_j= 150 °C

0.25

0.4

I_D

oﬀ-state current

Dynamic characteristics

dV_D/dt

rate of rise of oﬀ-state

voltage

V_DM= 536 V; T_j= 150 °C; (V_DM= 67%

of V_DRM); exponential waveform; gate

open circuit

1000

V/μs

dI_com/dt

rate of change of

commutating current

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 10 A;

dV_com/dt = 20 V/μs; gate open circuit

A/ms

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 10 A;

dV_com/dt = 10 V/μs; gate open circuit

V_D= 400 V; T_j= 150 °C; I_T(RMS)= 10 A;

dV_com/dt = 1 V/μs; gate open circuit

BTA410-800BT

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Product data sheet

09 October 2021

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