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BTA410-800BT PDF预览

BTA410-800BT

更新时间: 2024-01-25 17:52:51
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
14页 645K
描述
4 QUADRANT LOGIC LEVEL TRIAC

BTA410-800BT 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.75JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:TIN
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BTA410-800BT 数据手册

 浏览型号BTA410-800BT的Datasheet PDF文件第2页浏览型号BTA410-800BT的Datasheet PDF文件第3页浏览型号BTA410-800BT的Datasheet PDF文件第4页浏览型号BTA410-800BT的Datasheet PDF文件第5页浏览型号BTA410-800BT的Datasheet PDF文件第6页浏览型号BTA410-800BT的Datasheet PDF文件第7页 
BTA410-800BT  
O-220AB  
T
3Q Hi-Com Triac  
Rev. 1 — 19 March 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic  
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt  
can occur. This "series BT" triac will commutate the full RMS current at the maximum  
rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in  
applications where "high junction operating temperature capability" is required.  
1.2 Features and benefits  
3Q technology for improved noise  
High voltage capability  
immunity  
Least sensitive gate for highest noise  
High commutation capability with  
immunity  
maximum false trigger immunity  
Planar passivated for voltage  
High immunity to false turn-on by dV/dt  
ruggedness and reliability  
High junction operating temperature  
Triggering in three quadrants only  
capability  
1.3 Applications  
Applications subject to high  
Motor controls e.g. washing machines  
temperature  
and vacuum cleaners  
Electronic thermostats (heating and  
Rectifier-fed DC inductive loads e.g.  
cooling)  
DC motors and solenoids  
1.4 Quick reference data  
Table 1.  
Symbol  
VDRM  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
800  
100  
Unit  
V
repetitive peak off-state voltage  
-
-
-
-
ITSM  
non-repetitive peak on-state  
current  
full sine wave; Tj(init) = 25 °C;  
tp = 20 ms; see Figure 4;  
see Figure 5  
A
Tj  
junction temperature  
RMS on-state current  
-
-
-
-
150  
10  
°C  
A
IT(RMS)  
full sine wave; Tmb 131 °C;  
see Figure 1; see Figure 2;  
see Figure 3  
 
 
 
 
 

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