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BT136S-800E-T PDF预览

BT136S-800E-T

更新时间: 2024-11-28 21:06:59
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关栅极
页数 文件大小 规格书
14页 216K
描述
800V, 4A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-252, PLASTIC, SC-63, DPAK-3

BT136S-800E-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.18其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
最大直流栅极触发电流:10 mA最大直流栅极触发电压:1.5 V
最大维持电流:15 mAJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:4 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:800 V
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT136S-800E-T 数据手册

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K
A
P
BT136S-800E  
4Q Triac  
D
30 September 2013  
Product data sheet  
1. General description  
Planar passivated sensitive gate four quadrant triac in a SOT428 (DPAK) surface-  
mountable plastic package intended for use in general purpose bidirectional switching  
and phase control applications. This sensitive gate "series E" triac is intended to be  
interfaced directly to microcontrollers, logic integrated circuits and other low power gate  
trigger circuits.  
2. Features and benefits  
Direct triggering from low power drivers and logic ICs  
High blocking voltage capability  
Low holding current for low current loads and lowest EMI at commutation  
Planar passivated for voltage ruggedness and reliability  
Sensitive gate  
Surface mountable package  
Triggering in all four quadrants  
3. Applications  
General purpose motor control  
General purpose switching  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
800  
V
ITSM  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
-
-
-
-
25  
4
A
A
state current  
tp = 20 ms; Fig. 4; Fig. 5  
IT(RMS)  
RMS on-state current  
full sine wave; Tmb ≤ 107 °C; Fig. 1;  
Fig. 2; Fig. 3  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
2.5  
4
10  
10  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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