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BT136X-500D PDF预览

BT136X-500D

更新时间: 2024-02-05 01:38:11
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
6页 53K
描述
Triacs logic level

BT136X-500D 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.26外壳连接:ISOLATED
配置:SINGLE换向电压的临界上升率-最小值:10 V/us
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:50 mA
最大直流栅极触发电压:1.5 V最大维持电流:30 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:4 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:500 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BT136X-500D 数据手册

 浏览型号BT136X-500D的Datasheet PDF文件第2页浏览型号BT136X-500D的Datasheet PDF文件第3页浏览型号BT136X-500D的Datasheet PDF文件第4页浏览型号BT136X-500D的Datasheet PDF文件第5页浏览型号BT136X-500D的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136X series D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glasspassivated,sensitivegatetriacs  
in a full pack plastic envelope,  
intended for use in general purpose  
bidirectional switching and phase  
control applications. These devices  
are intended to be interfaced directly  
to microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
SYMBOL PARAMETER  
MAX. MAX. UNIT  
BT136X- 500D 600D  
500 600  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state voltages  
V
A
A
RMS on-state current  
4
25  
4
25  
Non-repetitive peak on-state current  
PINNING - SOT186A  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
case  
T2  
T1  
2
main terminal 2  
gate  
3
G
1
2 3  
case isolated  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
6001  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Ths 92 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
August 1997  
1
Rev 1.200  

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