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BT136SSERIESD

更新时间: 2024-02-05 00:32:39
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其他 - ETC 可控硅
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6页 54K
描述
Triacs logic level

BT136SSERIESD 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.55触发设备类型:TRIAC
Base Number Matches:1

BT136SSERIESD 数据手册

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Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136S series D  
BT136M series D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
triacsin aplastic envelopesuitable for  
surface mounting, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. UNIT  
BT136S (or BT136M)- 500D 600D  
500 600  
general  
purpose  
and  
bidirectional  
phase control  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state  
V
A
A
switching  
voltages  
4
25  
4
25  
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
RMS on-state current  
Non-repetitive peak on-state current  
PINNING - SOT428  
PIN CONFIGURATION  
SYMBOL  
PIN  
NUMBER  
Standard Alternative  
tab  
S
M
1
2
MT1  
MT2  
gate  
MT2  
gate  
MT2  
MT1  
MT2  
T2  
T1  
3
2
G
1
3
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
July 1997  
1
Rev 1.000  

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