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BT136SERIESD

更新时间: 2024-11-27 23:35:51
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其他 - ETC 可控硅
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6页 49K
描述
Triacs logic level

BT136SERIESD 数据手册

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Philips Semiconductors  
Product specification  
Triacs  
logic level  
BT136 series D  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
triacs in a plastic envelope, intended  
for use in general purpose  
bidirectional switching and phase  
control applications. These devices  
are intended to be interfaced directly  
to microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
SYMBOL PARAMETER  
MAX. MAX. UNIT  
BT136- 500D 600D  
500 600  
VDRM  
IT(RMS)  
ITSM  
Repetitive peak off-state voltages  
V
A
A
RMS on-state current  
4
25  
4
25  
Non-repetitive peak on-state current  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
tab  
T2  
T1  
2
main terminal 2  
gate  
3
G
1 2 3  
tab main terminal 2  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-500  
-600  
VDRM  
Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 107 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
4
A
t = 20 ms  
-
-
-
25  
27  
3.1  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 6 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.  
August 1997  
1
Rev 1.200  

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