Datasheet > BT136SSERIESE

BT136SSERIESE

更新时间： 2024-11-27 23:35:51

品牌	Logo	应用领域
恩智浦 - NXP		可控硅栅
页数	文件大小	规格书
6页	54K
描述
Triacs sensitive gate

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BT136SSERIESE 数据手册

Philips Semiconductors

Product specification

Triacs

sensitive gate

BT136S series E

BT136M series E

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, sensitive gate

triacs in a plastic envelope, suitable

forsurfacemounting, intended foruse

in general purpose bidirectional

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT136S (or BT136M)- 500E 600E 800E

V_DRM

Repetitive peak off-state

500

600

800

switching

and

phase

control

voltages

applications, where high sensitivity is

required in all four quadrants.

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

NUMBER

Standard Alternative

tab

MT1

MT2

gate

MT2

gate

MT2

MT1

MT2

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 107 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

3.1

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 6 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

July 1997

Rev 1.000

12 3 4 5 6

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