Datasheet > BT136SSERIES

BT136SSERIES

更新时间： 2024-11-27 23:35:51

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6页	55K
描述
Triacs

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BT136SSERIES 数据手册

Philips Semiconductors

Product specification

Triacs

BT136S series

BT136M series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a plastic

envelope, suitable for surface

mounting, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT136S (or BT136M)-

500

600

800

applications

requiring

high

BT136S (or BT136M)- 500F 600F 800F

BT136S (or BT136M)- 500G 600G 800G

bidirectional transient and blocking

voltage capability and high thermal

V_DRM

Repetitive peak off-state

voltages

500

600

800

cycling

performance.

Typical

applications include motor control,

industrial and domestic lighting,

heating and static switching.

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

NUMBER

Standard Alternative

tab

MT1

MT2

gate

MT2

gate

MT2

MT1

MT2

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 107 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

3.1

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 6 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

October 1997

Rev 1.100

12 3 4 5 6

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