Datasheet > BST39

BST39

更新时间： 2024-09-16 09:00:39

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描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BST39 数据手册

BST39,BST40

TRANSISTOR (NPN)

SOT-89-3L

FEATURES

Low Current

High Voltage

1. BASE

2. COLLECTOR

3. EMITTER

APPLICATIONS

General Purpose Switching and Amplification

MARKING:BCT39:AT1

BCT40:AT2

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

BST39

Value

400

Unit

V_CBO

Collector-Base Voltage

BST40

BST39

BST40

300

Collector-Emitter Voltage

350

V_CEO

250

V_EBO

I_C

Emitter-Base Voltage

Collector Current

℃/W

℃

100

P_C

Collector Power Dissipation

500

R_θJA

T_j

Thermal Resistance From Junction To Ambient

Junction Temperature

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

400

300

350

250

Typ

Max

Unit

BST39

BST40

BST39

BST40

Collector-base breakdown voltage

V_(BR)CBO

I_C=100µA,I_E=0

I_C=1mA,I_B=0

Collector-emitter breakdown voltage

V_(BR)CEO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)EBO

I_CBO

I_E=100µA,I_C=0

V_CB=300V,I_E=0

V_EB=5V,I_C=0

I_EBO

100

DC current gain

h_FE

V_CE=10V, I_C=20mA

I_C=50mA,I_B=4mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

0.5

VCE=10V,IC=10mA, f=100MHz 70

V_CB=10V, I_E=0, f=1MHz

MHz

Collector output capacitance

C_ob

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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