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BST39TA

更新时间: 2024-11-21 12:53:51
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管高压局域网
页数 文件大小 规格书
1页 32K
描述
SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

BST39TA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:15 weeks
风险等级:0.82外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHzBase Number Matches:1

BST39TA 数据手册

  
SOT89 NPN SILICON PLANAR  
HIGH VOLTAGE TRANSISTOR  
BST39  
ISSUE 4 – J UNE 1996  
FEATURES  
*
*
Fast Switching  
High hFE  
C
.
COMPLEMENTARY TYPE – BST16  
PARTMAKING DETAIL – AT1  
E
C
B
SOT89  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
Collector-Base Voltage  
400  
V
V
Collector-Em itter Voltage  
350  
Em itter-Base Voltage  
5
V
Peak Pulse Current  
1
A
Continuous Collector Current  
Power Dissipation at Tam b=25°C  
Operating and Storage Tem perature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
500  
1
m A  
W
°C  
Ptot  
Tj:Tstg  
-65 to +150  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
400  
IC=10µA  
Collector-Em itter  
Breakdown Voltage  
350  
5
V
V
IC=1m A*  
Em itter-Base  
IE=10µA  
Breakdown Voltage  
Collector Cut-Off Current  
ICBO  
20  
nA  
V
VCB=300V  
Collector-Em itter  
VCE(sat)  
0.5  
IC=50m A, IB=4m A  
Saturation Voltage  
Base-Em itter  
VBE(sat)  
1.3  
V
IC=50m A, IB=4m A  
Saturation Voltage  
Static Forward Current  
Transfer Ratio  
hFE  
40  
70  
IC=20m A, VCE=10V*  
Output Capacitance  
Input Capacitance  
Transition Frequency  
Cobo  
Cibo  
fT  
2
pF  
VCB=10V, f=1MHz  
VEB=10V, f=1MHz  
20  
pF  
MHz  
IC=10m A, VCE=10V,  
f=5MHz  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMT458 datasheet.  
3 - 77  

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SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR