Datasheet > BST40

BST40

更新时间： 2024-11-21 12:53:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管
页数	文件大小	规格书
2页	127K
描述
Low current (max. 50 mA) High voltage (max. 300 V). peak base current IBM 100 mA

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BST40 数据手册

SSMMDD TTyyppee

Product specification

BST39; BST40

Features

Low current (max. 50 mA)

High voltage (max. 300 V).

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CBO

Rating

400

Unit

collector-base voltage

(open emitte)

BST39

BST40

BST39

BST40

300

collector-emitter voltage

(open-base )

350

V^CEO

250

emitter-base voltage (open collector)

collector current (DC)

V^EBO

100

peak collector current

I^CM

200

peak base current

I^BM

100

P^tot

1.3

total power dissipation T^amb

storage temperature

T^stg

T^j

-65 to150

150

junction temperature

operating ambient temperature

T^amb

R^{th j-a}

R^{th j-s}

-65 to150

thermal resistance from junction to ambient *

K/W

thermal resistance from junction to soldering point

* Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for

collector 6 cm².

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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