Datasheet > BST39-Q

BST39-Q

更新时间： 2024-11-19 15:19:11

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安世 - NEXPERIA		/
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描述
NPN high-voltage transistorProduction

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BST39-Q 数据手册

BST39-Q

NPN high-voltage transistor

14 July 2023

Product data sheet

1. General description

NPN high-voltage transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

•

Low current (max. 100 mA)

•

High voltage (max. 350 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

350

I_C

collector current

DC current gain

100

h_FE

V_CE= 10 V; I_C= 20 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter

Simplified outline

Graphic symbol

collector

base

sym042

SOT89

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BST39-Q

SOT89

plastic, surface-mounted package; 3 leads; 1.5 mm pitch; SOT89

4.5 mm x 2.5 mm x 1.5 mm body

12 3 4 5 6 7

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