Datasheet > BSS138KJ

BSS138KJ

更新时间： 2024-03-03 10:10:55

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	694K
描述
SOT-23

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BSS138KJ 数据手册

BSS138KJ

Electrical Characteristics (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BV_DSS

V_GS= 0V, I_D=250μA

V_DS=60V, V_GS=0V

Zero Gate Voltage Drain Current

I_DSS

μA

100

±1 0

1.5

1.8

3.7

8.5

1.3

V_DS=60V, V_GS=0V, Tj=150℃

V_GS= ±20V, V_DS=0V

V_DS= V_GS, I_D=250μA

V_GS=10V, I_D=0.6A

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

μA

V_GS(th)

0.5

1.1

1.25

2.65

5.6

0.9

V_GS=4.5V, I_D=0.2A

V_GS=2.5V, I_D=0.1A

V_GS=1.8V, I_D=0.01A

I_S=0.6A, V_GS=0V

Static Drain-Source On-Resistance

R_DS(ON)

Diode Forward Voltage

Gate resistance

V_SD

R_G

I_S

f=1MHz, Open drain

Maximum Body-Diode Continuous Current

Dynamic Parameters

Input Capacitance

0.6

C_iss

C_oss

C_rss

Output Capacitance

V_DS=30V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

Switching Parameters

Total Gate Charge

Q_g

Q_gs

Q_gd

Q_rr

t_rr

1.4

0.5

0.2

Gate-Source Charge

Gate-Drain Charge

V_GS=10V, V_DS=30V, I_D=1A

I_F=1A, di/dt=100A/us

Reverse Recovery Charge

Reverse Recovery Time

Turn-on Delay Time

t_D(on)

t_r

t_D(off)

t_f

Turn-on Rise Time

V_GS=10V, V_DD=30V, I_D=1A

R_GEN=2.3Ω

Turn-off Delay Time

Turn-off fall Time

A. Repetitive rating; pulse width limited by max. junction temperature.

B. P_dis based on max. junction temperature, using junction-case thermal resistance.

C. The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2oz. Copper, in the still air environment with T_A=25℃.

The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.

2 / 8

S-E267

Rev.1.1,30-Mar-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

123 4 5 6 7 8

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