是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.48 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 224525 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | MOSFET (N-Channel) | Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | SOT-23 (TO-236) CASE 318-08 ISSUE AS | Samacsys Released Date: | 2015-07-28 06:45:00 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (Abs) (ID): | 0.2 A |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 3.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 5 pF |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.225 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS138LT1G | ONSEMI |
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Power MOSFET 200 mA, 50 V | |
BSS138LT3 | ONSEMI |
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Power MOSFET 200 mA, 50 V | |
BSS138LT3G | ONSEMI |
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Power MOSFET 200 mA, 50 V | |
BSS138LT7G | ONSEMI |
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单N沟道逻辑电平功率MOSFET 50V,200mA,3.5Ω | |
BSS138LV | BL Galaxy Electrical |
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0.21A, 50V, 0.25W, N Channel, Small Signal MOSFETs | |
BSS138-MR | ETC |
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MOSFET BSS138 MINIREEL 500PCS | |
BSS138N | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSS138N | ANALOGPOWER |
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N-Channel 50-V (D-S) MOSFET | |
BSS138N_09 | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSS138NH6327 | INFINEON |
获取价格 |
SIPMOS® Small-Signal-Transistor |