Datasheet > BSS138N

BSS138N

更新时间： 2024-01-16 23:37:11

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描述
N-Channel 50-V (D-S) MOSFET

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技术参数
数据手册

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BSS138N 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.55
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BSS138N 数据手册

Analog Power

BSS138N

N-Channel 50-V (D-S) MOSFET

These miniature surface mount MOSFETs

utilize High Cell Density process. Low

r_DS(on)assures minimal power loss and

conserves energy, making this device ideal

for use in power management circuitry.

Typical applications are DC-DC

converters, power management in portable

and battery-powered products such as

computers, printers, PCMCIA cards,

cellular and cordless telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

0.26

0.22

0.2

3.5 @ V_GS= 10V

6 @ V_GS= 4.5V

10 @ V_GS= 2.75V

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SOT-23 Surface Mount Package

Saves Board Space

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±20

T_A=25^oC

T_A=70^oC

0.26

0.2

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

0.9

I_DM

I_S

0.2

T_A=25^oC

T_A=70^oC

1.25

0.8

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum

Units

^oC/W

t <= 5 sec

Steady-State

100

Maximum Junction-to-Ambient^a

R_THJA

166

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-BSS138_E

July, 2002 - Rev. A

PRELIMINARY

12 3 4 5

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