Datasheet > BSS138-MR

BSS138-MR

更新时间： 2024-01-19 12:29:37

品牌	Logo	应用领域
其他 - ETC		过程控制系统 PCS
页数	文件大小	规格书
5页	56K
描述
MOSFET BSS138 MINIREEL 500PCS

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中文翻译

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技术参数
数据手册

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BSS138-MR 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.55
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BSS138-MR 数据手册

May 1995

BSS138

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

0.22 A, 50V. R_DS(ON)= 3.5W @ V_GS= 10V.

These N-Channel enhancement mode field effect

transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. These products

have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching

performance. These products are particularly suited for

low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and

other switching applications.

High density cell design for extremely low R_DS(ON)

Rugged and Relaible

Compact industry standard SOT-23 surface mount

package.

_______________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

BSS138

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage (R_GS< 20KW)

Gate-Source Voltage - Continuous

± 20

± 40

V_GSS

- Non Repetitive (T_P< 50 µS)

Drain Current - Continuous

- Pulsed

0.22

0.88

I_D

Maximum Power Dissipation

Derate Above 25°C

0.36

mW/°C

°C

P_D

2.8

Operating and Storage Temperature Range

-55 to 150

T_J,T_STG

T_L

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Ambient

350

°C/W

BSS138 Rev. A1

12 3 4 5

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