Datasheet > BS616LV1611TAG70

BS616LV1611TAG70

更新时间： 2024-11-30 03:45:59

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	127K
描述
SRAM

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中文翻译

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技术参数
数据手册

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BS616LV1611TAG70 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

BS616LV1611TAG70 数据手册

Very Low Power CMOS SRAM

1M X 16 bit

BS616LV1611

Pb-Free and Green package materials are compliant to RoHS

n FEATURES

ŸWide V_CCoperation voltage : 2.4V ~ 5.5V

n DESCRIPTION

The BS616LV1611 is a high performance, very low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 1.5uA at 3.0V/25^OC and maximum access time of 55ns at

3.0V/125^OC.

ŸVery low power consumption :

V_CC= 3.0V

V_CC= 5.0V

Operation current : 46mA (Max.)at 55ns

2mA (Max.)at 1MHz

1.5uA (Typ.) at 25 ^OC

Standby current :

Operation current : 115mA (Max.)at 55ns

10mA (Max.)at 1MHz

Standby current :

ŸHigh speed access time :

6.0uA (Typ.) at 25^OC

Easy memory expansion is provided by an active LOW chip enable

(CE1), active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

-55

-70

55ns(Max.) at V_CC=3.0~5.5V

70ns(Max.) at V_CC=2.7~5.5V

ŸAutomatic power down when chip is deselected

ŸEasy expansion with CE2, CE1 and OE options

ŸI/O Configuration x8/x16 selectable by LB and UB pin.

ŸThree state outputs and TTL compatible

The BS616LV1611 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS616LV1611 is available in 48-pin TSOP Type I package and

48-ball BGA package.

ŸFully static operation, no clock, no refresh

ŸData retention supply voltage as low as 1.5V

n POWER CONSUMPTION

POWER DISSIPATION

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

TEMPERATURE

PKG TYPE

(I_CC, Max)

(I_{C CSB1}, Typ.)

(I_CCSB1, Max)

V_CC=5.0V

1MHz f _{M ax.}

V_CC=3.0V

f _Max.

V_CC=5.0V V _CC=3.0V V_CC=5.0V V_CC=3.0V

1MHz

2mA

Automotive

Grade

BS616LV1611FA

BGA-48-0912

TSOP I-48

6.0uA

1.5uA

220uA

120uA

10mA

115mA

46mA

BS616LV1611TA -40^OC to +125^OC

n PIN CONFIGURATIONS

n BLOCK DIAGRAM

CE2

DQ15

DQ14

DQ13

DQ12

VSS

VCC

DQ11

DQ10

DQ9

DQ8

4 4

A13

A12

A11

CE1

DQ0

DQ1

DQ2

DQ3

VCC

VSS

DQ4

DQ5

DQ6

DQ7

A19

A10

Address

Input

1024

Mem oryArray

Row

Decoder

Buffer

1024 x 16384

BH616LV1611TC

BH616LV1611TI

16384

DQ0

Column I/O

Data

Input

Buffer

A18

A17

A10

Write Driver

Sense Am p

A16

A15

A14

A11

A12

A13

Data

Output

Buffer

1024

Column Decoder

DQ15

CE2

CE1

Address Input Buffer

CE1

Control

D10

A14 A15 A16 A17 A18 A0 A1 A2 A3 A19

V_CC

VSS

VCC

D14

D15

A18

D11

D12

D13

A19

A17

A14

A12

VCC

VSS

A16

A15

A13

A10

A11

48-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

R0201-BS616LV1611A

Revision 2.2A

Mar.

2006

12 3 4 5 6 7...11

中文翻译

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