是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LFBGA, BGA48,6X8,30 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
最长访问时间: | 70 ns | 备用内存宽度: | 8 |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B48 |
JESD-609代码: | e1 | 长度: | 12 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 1MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装等效代码: | BGA48,6X8,30 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.4 mm |
最小待机电流: | 1.5 V | 子类别: | SRAMs |
最大压摆率: | 0.037 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Silver/Copper (Sn95.5Ag3.8Cu0.7) |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 宽度: | 9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BS616LV1613FIP55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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BS616LV1613FIP70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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BS616LV1615 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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BS616LV1615FC | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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BS616LV1615FC55 | BSI |
获取价格 |
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48 |
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BS616LV1615FC-55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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BS616LV1615FC70 | BSI |
获取价格 |
Standard SRAM, 1MX16, 70ns, CMOS, PBGA48 |
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BS616LV1615FC-70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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BS616LV1615FCG55 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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BS616LV1615FCG70 | BSI |
获取价格 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
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