Datasheet > BS616LV1615

BS616LV1615

更新时间： 2024-11-28 22:48:31

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
8页	255K
描述
Very Low Power/Voltage CMOS SRAM 1M X 16 bit

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BS616LV1615 数据手册

Very Low Power/Voltage CMOS SRAM

1M X 16 bit

(Dual CE Pins)

BSI

BS616LV1615

FEATURES

DESCRIPTION

The BS616LV1615 is a high performance, very low power CMOS Static

Random Access Memory organized as 1,048,576 words by 16 bits and

operates from a range of 4.5V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 15uA at 5.0V/25^oC and maximum access time of 55ns at 5.0V/85^oC.

Easy memory expansion is provided by an active LOW chip enable(CE1)

, active HIGH chip enable (CE2), active LOW output enable(OE) and

three-state output drivers.

• Vcc operation voltage : 4.5~5.5V

• Very low power consumption :

Vcc = 5.0V C-grade: 113mA (@55ns) operating current

I -grade: 115mA (@55ns) operating current

C-grade: 90mA (@70ns) operating current

I -grade: 92mA (@70ns) operating current

15uA (Typ.) CMOS standby current

• High speed access time :

-55

-70

55ns

70ns

The BS616LV1615 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV1615 is available in 48-pin BGA package.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2,CE1 and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

TEMPERATURE

Vcc

RANGE

(ICCSB1, Max)

(ICC, Max)

PRODUCT FAMILY

PKG TYPE

55ns : 4.5~5.5V

70ns : 4.5~5.5V

Vcc=5V

55ns

Vcc=5V

70ns

Vcc=5V

110uA

BS616LV1615FC

BS616LV1615FI

+0 ^OC to +70^O

-40^OC to +85^O

4.5V ~ 5.5V

55 / 70

113mA 90mA

115mA 92mA

BGA-48-0912

220

PIN CONFIGURATIONS

BLOCK DIAGRAM

Address

Input

CE2

2048

Row

A17

A16

Memory Array

2048 x 8192

Buffer

CE1

A15

A14

A13

A12

Decoder

D10

8192

Data

Input

Column I/O

VSS D11

VCC D12

A17

VCC

Buffer

Write Driver

Sense Amp

512

A16

A15

A13

A10

Data

Output

VSS

Buffer

Column Decoder

D15

D14

D15

A18

D13

A14

CE2

CE1

A11

A12

A.19

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5A18 A19

Vcc

Vss

48-Ball CSP top View

Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.

Revision 2.1

R0201-BS616LV1615

Jan.

2004

12 3 4 5 6 7 8

中文翻译

下载PDF

与BS616LV1615相关器件

型号	品牌	获取价格	描述	数据表
BS616LV1615FC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1615FC55	BSI	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PBGA48
BS616LV1615FC-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1615FC70	BSI	获取价格	Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
BS616LV1615FC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1615FCG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1615FCG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1615FCP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1615FCP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1615FI	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit

与BS616LV1615相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV1615

BS616LV1615 数据手册

与BS616LV1615相关器件

与BS616LV1615相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV1615

BS616LV1615 数据手册

与BS616LV1615相关器件

与BS616LV1615相关文章

您还可以找

您在本页遇到什么问题？