Datasheet > BS616LV1611TAP70

BS616LV1611TAP70

更新时间： 2024-11-30 03:13:39

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	127K
描述
SRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BS616LV1611TAP70 数据手册

Very Low Power CMOS SRAM

1M X 16 bit

BS616LV1611

Pb-Free and Green package materials are compliant to RoHS

n FEATURES

ŸWide V_CCoperation voltage : 2.4V ~ 5.5V

n DESCRIPTION

The BS616LV1611 is a high performance, very low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical CMOS standby

current of 1.5uA at 3.0V/25^OC and maximum access time of 55ns at

3.0V/125^OC.

ŸVery low power consumption :

V_CC= 3.0V

V_CC= 5.0V

Operation current : 46mA (Max.)at 55ns

2mA (Max.)at 1MHz

1.5uA (Typ.) at 25 ^OC

Standby current :

Operation current : 115mA (Max.)at 55ns

10mA (Max.)at 1MHz

Standby current :

ŸHigh speed access time :

6.0uA (Typ.) at 25^OC

Easy memory expansion is provided by an active LOW chip enable

(CE1), active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

-55

-70

55ns(Max.) at V_CC=3.0~5.5V

70ns(Max.) at V_CC=2.7~5.5V

ŸAutomatic power down when chip is deselected

ŸEasy expansion with CE2, CE1 and OE options

ŸI/O Configuration x8/x16 selectable by LB and UB pin.

ŸThree state outputs and TTL compatible

The BS616LV1611 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS616LV1611 is available in 48-pin TSOP Type I package and

48-ball BGA package.

ŸFully static operation, no clock, no refresh

ŸData retention supply voltage as low as 1.5V

n POWER CONSUMPTION

POWER DISSIPATION

STANDBY

Operating

PRODUCT

FAMILY

OPERATING

TEMPERATURE

PKG TYPE

(I_CC, Max)

(I_{C CSB1}, Typ.)

(I_CCSB1, Max)

V_CC=5.0V

1MHz f _{M ax.}

V_CC=3.0V

f _Max.

V_CC=5.0V V _CC=3.0V V_CC=5.0V V_CC=3.0V

1MHz

2mA

Automotive

Grade

BS616LV1611FA

BGA-48-0912

TSOP I-48

6.0uA

1.5uA

220uA

120uA

10mA

115mA

46mA

BS616LV1611TA -40^OC to +125^OC

n PIN CONFIGURATIONS

n BLOCK DIAGRAM

CE2

DQ15

DQ14

DQ13

DQ12

VSS

VCC

DQ11

DQ10

DQ9

DQ8

4 4

A13

A12

A11

CE1

DQ0

DQ1

DQ2

DQ3

VCC

VSS

DQ4

DQ5

DQ6

DQ7

A19

A10

Address

Input

1024

Mem oryArray

Row

Decoder

Buffer

1024 x 16384

BH616LV1611TC

BH616LV1611TI

16384

DQ0

Column I/O

Data

Input

Buffer

A18

A17

A10

Write Driver

Sense Am p

A16

A15

A14

A11

A12

A13

Data

Output

Buffer

1024

Column Decoder

DQ15

CE2

CE1

Address Input Buffer

CE1

Control

D10

A14 A15 A16 A17 A18 A0 A1 A2 A3 A19

V_CC

VSS

VCC

D14

D15

A18

D11

D12

D13

A19

A17

A14

A12

VCC

VSS

A16

A15

A13

A10

A11

48-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

R0201-BS616LV1611A

Revision 2.2A

Mar.

2006

12 3 4 5 6 7...11

中文翻译

下载PDF

与BS616LV1611TAP70相关器件

型号	品牌	获取价格	描述	数据表
BS616LV1611TC55	BSI	获取价格	SRAM
BS616LV1611TC70	BSI	获取价格	SRAM
BS616LV1611TCG55	BSI	获取价格	SRAM
BS616LV1611TCG70	BSI	获取价格	SRAM
BS616LV1611TCP55	BSI	获取价格	SRAM
BS616LV1611TCP70	BSI	获取价格	SRAM
BS616LV1611TI55	BSI	获取价格	SRAM
BS616LV1611TI70	BSI	获取价格	SRAM
BS616LV1611TIG55	BSI	获取价格	Very Low Power CMOS SRAM 1M X 16 bit
BS616LV1611TIP55	BSI	获取价格	SRAM

与BS616LV1611TAP70相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV1611TAP70

BS616LV1611TAP70 数据手册

与BS616LV1611TAP70相关器件

与BS616LV1611TAP70相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV1611TAP70

BS616LV1611TAP70 数据手册

与BS616LV1611TAP70相关器件

与BS616LV1611TAP70相关文章

您还可以找

您在本页遇到什么问题？