BS616LV1611TIG55

更新时间： 2024-09-21 07:15:27

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
11页	227K
描述
Very Low Power CMOS SRAM 1M X 16 bit

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BS616LV1611TIG55 数据手册

Very Low Power CMOS SRAM

1M X 16 bit

BS616LV1611

Green package materials are compliant to RoHS

FEATURES

DESCRIPTION

y Wide V_CCoperation voltage : 2.4V ~ 5.5V

y Very low power consumption :

The BS616LV1611 is a high performance, very low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with maximum CMOS standby

current of 16/100uA at Vcc=3/5V at 85^OC and maximum access time

of 55/70ns.

V_CC= 3.0V

Operation current : 46mA (Max.)at 55ns

2mA (Max.)at 1MHz

Standby current :

16uA (Max.) at 85 ^OC

V_CC= 5.0V

Operation current : 115mA (Max.)at 55ns

10mA (Max.)at 1MHz

Standby current :

y High speed access time :

100uA (Max.) at 85^OC

Easy memory expansion is provided by an active LOW chip enable

(CE1), active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

The BS616LV1611 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BS616LV1611 is available in 48-pin TSOP Type I package and

48-ball BGA package.

-55

-70

55ns(Max.) at V_CC=3.0~5.5V

70ns(Max.) at V_CC=2.7~5.5V

y Automatic power down when chip is deselected

y Easy expansion with CE2, CE1 and OE options

y I/O Configuration x8/x16 selectable by LB and UB pin.

y Three state outputs and TTL compatible

y Fully static operation, no clock, no refresh

y Data retention supply voltage as low as 1.5V

POWER CONSUMPTION

POWER DISSIPATION

Operating

STANDBY

PRODUCT

FAMILY

OPERATING

PKG TYPE

(I_CCSB1, Max)

(I_CC, Max)

TEMPERATURE

V_CC=5.0V

10MHz

V_CC=3.0V

10MHz

V_CC=5.0V V_CC=3.0V

1MHz

f_Max.

1MHz

f_Max.

BS616LV1611FI

BS616LV1611TI

BGA-48-0912

TSOP I-48

Industrial

100uA

16uA

10mA

50mA

115mA

2mA

20mA

46mA

-40^OC to +85^OC

PIN CONFIGURATIONS

BLOCK DIAGRAM

A13

A12

A11

CE1

DQ0

DQ1

DQ2

DQ3

VCC

CE2

A10

Address

Input

1024

Memory Array

DQ15

DQ14

DQ13

DQ12

VSS

VCC

DQ11

DQ10

DQ9

DQ8

Row

Decoder

Buffer

1024 x 16384

BS616LV1611TC

BS616LV1611TI

VSS

DQ4

DQ5

DQ6

DQ7

A19

A18

A17

A16

A15

A14

16384

DQ0

Column I/O

Data

Input

A10

A11

A12

A13

Write Driver

Sense Amp

Buffer

Data

Output

Buffer

1024

Column Decoder

DQ15

CE2

CE1

V_CC

V_SS

Address Input Buffer

D10

D11

D12

D13

A19

CE1

Control

A14 A15 A16 A17 A18 A0 A1 A2 A3 A19

VSS

VCC

D14

D15

A18

A17

A14

A12

VCC

VSS

A16

A15

A13

A10

A11

48-ball BGA top view

Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.

R0201-BS616LV1611

Revision

Oct.

2.4

2008

12 3 4 5 6 7...11

中文翻译

下载PDF

与BS616LV1611TIG55相关器件

型号	品牌	获取价格	描述	数据表
BS616LV1611TIP55	BSI	获取价格	SRAM
BS616LV1611TIP70	BSI	获取价格	SRAM
BS616LV1613	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1613FC	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1613FC55	BSI	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PBGA48
BS616LV1613FC-55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1613FC70	BSI	获取价格	Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
BS616LV1613FC-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1613FCG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1613FCG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit

与BS616LV1611TIG55相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

65
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

62
SL74HC10N：高性能三输入与非门解析
2024-09-03

134
AIC1781A 电池充电控制器深度解析
2024-09-03

130

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV1611TIG55

BS616LV1611TIG55 数据手册

与BS616LV1611TIG55相关器件

与BS616LV1611TIG55相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BS616LV1611TIG55

BS616LV1611TIG55 数据手册

与BS616LV1611TIG55相关器件

与BS616LV1611TIG55相关文章

您还可以找

您在本页遇到什么问题？