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BS616LV1611TIG55

更新时间： 2024-11-29 07:15:27
品牌 Logo 应用领域
BSI 静态存储器
页数 文件大小 规格书
11页 227K
描述
Very Low Power CMOS SRAM 1M X 16 bit

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BS616LV1611TIG55 数据手册

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Very Low Power CMOS SRAM  
1M X 16 bit  
BS616LV1611  
Green package materials are compliant to RoHS  
„ FEATURES  
„ DESCRIPTION  
y Wide VCC operation voltage : 2.4V ~ 5.5V  
y Very low power consumption :  
The BS616LV1611 is a high performance, very low power CMOS  
Static Random Access Memory organized as 1,048,576 by 16 bits  
and operates form a wide range of 2.4V to 5.5V supply voltage.  
Advanced CMOS technology and circuit techniques provide both  
high speed and low power features with maximum CMOS standby  
current of 16/100uA at Vcc=3/5V at 85OC and maximum access time  
of 55/70ns.  
VCC = 3.0V  
Operation current : 46mA (Max.)at 55ns  
2mA (Max.)at 1MHz  
Standby current :  
16uA (Max.) at 85 OC  
VCC = 5.0V  
Operation current : 115mA (Max.)at 55ns  
10mA (Max.)at 1MHz  
Standby current :  
y High speed access time :  
100uA (Max.) at 85OC  
Easy memory expansion is provided by an active LOW chip enable  
(CE1), active HIGH chip enable (CE2) and active LOW output  
enable (OE) and three-state output drivers.  
The BS616LV1611 has an automatic power down feature, reducing  
the power consumption significantly when chip is deselected.  
The BS616LV1611 is available in 48-pin TSOP Type I package and  
48-ball BGA package.  
-55  
-70  
55ns(Max.) at VCC=3.0~5.5V  
70ns(Max.) at VCC=2.7~5.5V  
y Automatic power down when chip is deselected  
y Easy expansion with CE2, CE1 and OE options  
y I/O Configuration x8/x16 selectable by LB and UB pin.  
y Three state outputs and TTL compatible  
y Fully static operation, no clock, no refresh  
y Data retention supply voltage as low as 1.5V  
„ POWER CONSUMPTION  
POWER DISSIPATION  
Operating  
STANDBY  
PRODUCT  
FAMILY  
OPERATING  
PKG TYPE  
(ICCSB1, Max)  
(ICC, Max)  
TEMPERATURE  
VCC=5.0V  
10MHz  
VCC=3.0V  
10MHz  
VCC=5.0V VCC=3.0V  
1MHz  
fMax.  
1MHz  
fMax.  
BS616LV1611FI  
BS616LV1611TI  
BGA-48-0912  
TSOP I-48  
Industrial  
100uA  
16uA  
10mA  
50mA  
115mA  
2mA  
20mA  
46mA  
-40OC to +85OC  
„ PIN CONFIGURATIONS  
„ BLOCK DIAGRAM  
A4  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A5  
A3  
2
A6  
A2  
3
A7  
A13  
A12  
A11  
A1  
4
OE  
A0  
5
UB  
CE1  
DQ0  
DQ1  
DQ2  
DQ3  
VCC  
NC  
6
LB  
7
CE2  
NC  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
Address  
Input  
1024  
Memory Array  
10  
8
9
DQ15  
DQ14  
DQ13  
DQ12  
VSS  
VCC  
DQ11  
DQ10  
DQ9  
DQ8  
A8  
Row  
Decoder  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Buffer  
1024 x 16384  
BS616LV1611TC  
BS616LV1611TI  
VSS  
DQ4  
DQ5  
DQ6  
DQ7  
A19  
WE  
A18  
A17  
A16  
A15  
A14  
16384  
DQ0  
.
.
.
.
.
.
Column I/O  
16  
16  
16  
Data  
.
.
.
.
.
.
A9  
Input  
A10  
A11  
A12  
A13  
Write Driver  
Sense Amp  
Buffer  
16  
Data  
Output  
Buffer  
1024  
1
2
3
4
5
6
Column Decoder  
DQ15  
CE2  
A
B
C
D
E
F
LB  
OE  
A0  
A1  
A2  
10  
CE2  
CE1  
WE  
OE  
UB  
LB  
VCC  
VSS  
Address Input Buffer  
D8  
D9  
UB  
D10  
D11  
D12  
D13  
A19  
A8  
A3  
A5  
A4  
A6  
CE1  
D1  
D0  
D2  
Control  
A14 A15 A16 A17 A18 A0 A1 A2 A3 A19  
VSS  
VCC  
D14  
D15  
A18  
A17  
NC  
A14  
A12  
A9  
A7  
D3  
VCC  
VSS  
D6  
A16  
A15  
A13  
A10  
D4  
D5  
G
H
WE  
A11  
D7  
NC  
48-ball BGA top view  
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.  
R0201-BS616LV1611  
Revision  
Oct.  
2.4  
1
2008  
1234567...11

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