Datasheet > BS616LV1611FI-55

BS616LV1611FI-55

更新时间： 2024-11-27 22:48:31

品牌	Logo	应用领域
BSI		静态存储器
页数	文件大小	规格书
8页	256K
描述
Very Low Power/Voltage CMOS SRAM 1M X 16 bit

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中文翻译

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数据手册

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BS616LV1611FI-55 数据手册

Very Low Power/Voltage CMOS SRAM

1M X 16 bit

(Dual CE Pins)

BSI

BS616LV1611

FEATURES

• Fully static operation

• Wide Vcc operation voltage : 2.4~5.5V

• Very low power consumption :

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2,CE1 and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

Vcc = 3.0V C-grade: 45mA (@55ns) operating current

I -grade: 46mA (@55ns) operating current

C-grade: 36mA (@70ns) operating current

I -grade: 37mA (@70ns) operating current

3.0uA (Typ.) CMOS standby current

Vcc = 5.0V C-grade: 113mA (@55ns) operating current

I -grade: 115mA (@55ns) operating current

C-grade: 90mA (@70ns) operating current

I -grade: 92mA (@70ns) operating current

15uA (Typ.) CMOS standby current

DESCRIPTION

The BS616LV1611 is a high performance, very low power CMOS Static

Random Access Memory organized as 1,048,576 words by 16 bits and

operates from a wide range of 2.4V to 5.5V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 3.0uA at 3V/25^oC and maximum access time of 55ns at 3.0V/85^oC.

Easy memory expansion is provided by an active LOW chip enable(CE1)

, active HIGH chip enable (CE2), active LOW output enable(OE) and

three-state output drivers.

• High speed access time :

-55

-70

55ns

70ns

The BS616LV1611 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV1611 is available in 48-pin BGA package.

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

PRODUCT FAMILY

POWER DISSIPATION

SPEED

(ns)

STANDBY

Operating

OPERATING

PRODUCT FAMILY

Vcc

RANGE

(ICCSB1, Max)

(ICC, Max)

PKG TYPE

TEMPERATURE

55ns : 3.0~5.5V

70ns : 2.7~5.5V

Vcc=3V

70ns

Vcc=5V

70ns

Vcc=3V

Vcc=5V

BS616LV1611FC

BS616LV1611FI

+0 ^OC to +70^O

-40^OC to +85^O

2.4V ~ 5.5V

55 / 70

10uA 110uA

36mA

90mA

92mA

BGA-48-0912

220

20uA

37mA

PIN CONFIGURATIONS

BLOCK DIAGRAM

Address

Input

CE2

2048

A17

A16

Row

Decoder

Memory Array

2048 x 8192

Buffer

CE1

A15

A14

A13

A12

D10

8192

Data

Input

Buffer

Column I/O

VSS D11

VCC D12

A17

VCC

Write Driver

Sense Amp

512

A16

A15

A13

A10

Data

Output

Buffer

VSS

Column Decoder

D15

D14

D15

A18

D13

A14

CE2

CE1

A11

A12

A.19

Control

Address Input Buffer

A11 A10 A9 A8 A7

A6 A5A18 A19

Vcc

Vss

48-Ball CSP top View

Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.

Revision 2.1

R0201-BS616LV1611

Jan.

2004

12 3 4 5 6 7 8

中文翻译

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与BS616LV1611FI-55相关器件

型号	品牌	获取价格	描述	数据表
BS616LV1611FI70	BSI	获取价格	Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
BS616LV1611FI-70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1611FIG55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1611FIG70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1611FIP55	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1611FIP70	BSI	获取价格	Very Low Power/Voltage CMOS SRAM 1M X 16 bit
BS616LV1611TA-55	BSI	获取价格	SRAM
BS616LV1611TA-70	BSI	获取价格	SRAM
BS616LV1611TAG55	BSI	获取价格	SRAM
BS616LV1611TAG70	BSI	获取价格	SRAM

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