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BS616LV1611FC70 PDF预览

BS616LV1611FC70

更新时间: 2024-02-01 12:04:16
品牌 Logo 应用领域
BSI 静态存储器内存集成电路
页数 文件大小 规格书
11页 161K
描述
Standard SRAM, 1MX16, 70ns, CMOS, PBGA48

BS616LV1611FC70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FBGA, BGA48,6X8,30Reach Compliance Code:unknown
风险等级:5.92最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0内存密度:16777216 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
湿度敏感等级:3端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
并行/串行:PARALLEL电源:3/5 V
认证状态:Not Qualified最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.09 mA
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOMBase Number Matches:1

BS616LV1611FC70 数据手册

 浏览型号BS616LV1611FC70的Datasheet PDF文件第1页浏览型号BS616LV1611FC70的Datasheet PDF文件第3页浏览型号BS616LV1611FC70的Datasheet PDF文件第4页浏览型号BS616LV1611FC70的Datasheet PDF文件第5页浏览型号BS616LV1611FC70的Datasheet PDF文件第6页浏览型号BS616LV1611FC70的Datasheet PDF文件第7页 
BS616LV1611  
n PIN DESCRIPTIONS  
Name  
Function  
These 20 address inputs select one of the 1,048,576 x 16 bit in the RAM  
A0-A19 Address Input  
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when  
data read form or write to the device. If either chip enable is not active, the device is  
deselected and is in standby power mode. The DQ pins will be in the high impedance  
state when the device is deselected.  
CE1 Chip Enable 1 Input  
CE2 Chip Enable 2 Input  
The write enable input is active LOW and controls read and write operations. With the  
chip selected, when WE is HIGH and OE is LOW, output data will be present on the  
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the  
selected memory location.  
WE Write Enable Input  
The output enable input is active LOW. If the output enable is active while the chip is  
selected and the write enable is inactive, data will be present on the DQ pins and they  
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.  
Lower byte and upper byte data input/output control pins.  
OE Output Enable Input  
LB and UB Data Byte Control Input  
16 bi-directional ports are used to read data from or write data into the RAM.  
DQ0-DQ15 Data Input/Output  
Ports  
VCC  
Power Supply  
Ground  
VSS  
n TRUTH TABLE  
MODE  
CE2  
DQ0~DQ7 DQ8~DQ15 VCC CURRENT  
CE1  
WE  
OE  
LB  
UB  
H
X
L
X
X
X
X
High Z  
High Z  
High Z  
High Z  
High Z  
DOUT  
High Z  
High Z  
High Z  
High Z  
High Z  
DOUT  
ICCSB, ICCSB1  
Chip De-selected  
(Power Down)  
X
X
L
L
X
X
H
H
X
X
H
H
X
H
L
X
H
X
L
ICCSB, ICCSB1  
X
H
H
ICCSB, ICCSB1  
ICC  
ICC  
ICC  
ICC  
ICC  
ICC  
ICC  
ICC  
Output Disabled  
Read  
X
L
L
L
L
H
H
H
L
L
H
L
L
High Z  
DOUT  
DOUT  
H
L
High Z  
DIN  
L
DIN  
Write  
X
H
L
L
X
DIN  
H
DIN  
X
NOTES: H means VIH; L means VIL; X means dont care (Must be VIH or VIL state)  
Revision 2.3  
R0201-BS616LV1611  
2
May.  
2006  

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